White Light Emission From Silicon Oxycarbide Films Prepared By Using Atmospheric Pressure Microplasma Jet

摘要

An atmospheric pressure microplasma jet was employed as a deposition tool to fabricate silicon oxycarbide films from tetraethoxysilane-argon (Ar) mixture gas at room temperature. Resultant films exhibit intense visible emission under a 325 nm excitation which appears white to naked eyes in the range from ～1.75 to ～3.5 eV at room temperature. The origin of photoluminescence is attributed to the electron-hole pair recombination through neutral oxygen vacancies (NOVs) in the film. The density of NOV defects was found in the range from 3.48 × 10~(15) to 2.23 × 10~(16) cm~(-3). The photoluminescence quantum efficiencies were estimated to be 1.48%-4.15%. Present experiment results demonstrate that the silicon oxycarbide films prepared by using atmospheric pressure microplasma jet would be a competitive candidate for the development of white light emission devices.