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首页> 外文期刊>Journal of Applied Physics >Ballistic electron transport in hybrid ferromagnet/two-dimensional electron gas sandwich nanostructure: Spin polarization and magnetoresistance effect
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Ballistic electron transport in hybrid ferromagnet/two-dimensional electron gas sandwich nanostructure: Spin polarization and magnetoresistance effect

机译:混合铁磁体/二维电子气夹层纳米结构中的弹道电子传输:自旋极化和磁阻效应

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摘要

We have theoretically investigated ballistic electron transport through a combination of magnetic-electric barrier based on a vertical ferromagnet/two-dimensional electron gas/ferromagnet sandwich structure, which can be experimentally realized by depositing asymmetric metallic magnetic stripes both on top and bottom of modulation-doped semiconductor heterostructures. Our numerical results have confirmed the existence of finite spin polarization even though only antisymmetric stray field B_z is considered. By switching the relative magnetization of ferromagnetic layers, the device in discussion shows evident magnetoconductance. In particular, both spin polarization and magnetoconductance can be efficiently enhanced by proper electrostatic barrier up to the optimal value relying on the specific magnetic-electric modulation.
机译:我们从理论上研究了基于垂直铁磁/二维电子气/铁磁夹心结构的电磁势垒结合的弹道电子传输,可以通过在调制的顶部和底部均沉积不对称的金属磁条来通过实验实现,掺杂的半导体异质结构。我们的数值结果已经证实,即使仅考虑反对称杂散场B_z,也存在有限的自旋极化。通过切换铁磁层的相对磁化强度,所讨论的器件显示出明显的磁导率。特别地,依靠特定的电磁调制,通过适当的静电势垒可以将自旋极化和磁导两者有效地提高到最佳值。

著录项

  • 来源
    《Journal of Applied Physics》 |2009年第1期|557-561|共5页
  • 作者单位

    Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China National Laboratory of Microgravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080, People's Republic of China;

    School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China;

    Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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