机译:并四苯单晶场效应晶体管的温度相关载流子迁移率和阈值电压
International Graduate School of Arts and Sciences, Yokohama City Universite, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan;
International Graduate School of Arts and Sciences, Yokohama City Universite, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan;
International Graduate School of Arts and Sciences, Yokohama City Universite, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan;
International Graduate School of Arts and Sciences, Yokohama City Universite, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan;
International Graduate School of Arts and Sciences, Yokohama City Universite, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan;
International Graduate School of Arts and Sciences, Yokohama City Universite, 22-2 Seto, Kanazawa-ku, Yokohama 236-0027, Japan;
机译:裂隙式四晶单晶场效应晶体管中载流子迁移率的接触压力依赖性。
机译:具有电荷受体层的溶液固化有机场效应晶体管:空气中的高迁移率和低阈值电压操作
机译:超薄有机单晶:制造,场效应晶体管和电荷载流子迁移率的厚度依赖性
机译:挠性衬底顶部的Tetracene单晶场效应晶体管
机译:控制沉积或有机半导体单晶及其在场效应晶体管中的应用。
机译:调整电解质门控有机场效应晶体管中的阈值电压
机译:并四苯单晶上的场效应晶体管
机译:Inp n沟道增强模式金属 - 绝缘体 - 半导体场效应晶体管的阈值电压漂移。