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机译:关于锗掺杂对切克劳斯基生长硅中空洞形成的假定影响
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang Universite, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang Universite, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang Universite, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang Universite, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang Universite, Hangzhou 310027, China;
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang Universite, Hangzhou 310027, China;
机译:锗掺杂对切克劳斯基生长硅中空位形成能的影响
机译:高压退火对中子辐照或掺锗切克拉斯基生长硅表面层电性能的影响
机译:高压退火对中子辐照或掺锗切克拉斯基生长硅表面层电学性能的影响
机译:重掺杂对直拉生长硅生长缺陷的影响
机译:使用原位磷掺杂的选择性硅(1-x)锗(x)合金形成CMOS技术节点之间50 nm的n(+)p结。
机译:用于垂直晶体管应用的磷掺杂硅/硅锗多层结构的生长和选择性蚀刻
机译:锗对锗掺杂硅中空位聚集的影响
机译:Czochralski生长的中子嬗变掺杂硅中氧的电学性质研究