Raman scattering studies of p-type Sb-doped ZnO thin films

摘要

Antimony doped p-type ZnO films were grown on Al_2O_3 (0001) substrate by pulsed laser deposition. The structural properties of Zn_(1-x)Sb_xO (3% and 5%) thin films were investigated by Raman scattering studies. The softening of local lattice due to the formation of (Sb_(Zn)-2V_(Zn)) acceptor complexes was detected as the shift in E_2~(high) mode toward lower frequency side in ZnSbO thin films. Additional optical modes observed at 277, 333, 483, and 534 cm~(-1) are due to the breaking of translational symmetry in w-ZnO by Sb doping. The Zn-Sb related local vibrational mode was detected around 237 cm~(-1) in 5% Sb doped ZnO thin film. Room temperature Hall measurements exhibited low resistivity of 0.017 Ω cm, high hole concentration of 6.25 × 10~(18) cm~(-3), and mobility of 57.44 cm~2/V s in the 5% Sb-doped ZnO thin film.