机译:纳米Al掺杂氧化锌薄膜的电阻率随Al含量及其在晶界偏析程度的函数
Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76021 Karlsruhe, Germany;
Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76021 Karlsruhe, Germany;
Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76021 Karlsruhe, Germany;
Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76021 Karlsruhe, Germany;
Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76021 Karlsruhe, Germany;
Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76021 Karlsruhe, Germany;
机译:稀纳米晶铜合金中晶界偏析与电阻率之间的相互作用
机译:纳米晶氧化锌薄膜中无序诱导的半导体向金属的转变和晶界的修饰
机译:纳米晶氧化锌薄膜中无序诱导的半导体向金属的转变和晶界的修饰
机译:纳米晶锌氧化物氧化物边界行为中纳米晶锌氧化物边界行为的动态高分辨率透射电子显微镜
机译:通过脉冲激光沉积和溶胶-凝胶法控制氧化锌薄膜的电阻率和光学性质。
机译:纳米晶Fe(Cr)中的晶界比偏析
机译:基材温度对磁控溅射层逐层掺杂锌氧化物薄膜结构,光学和电性能的影响