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机译:通过金属氧化物半导体电容器中的界面氧化物-高k栅极堆叠的隧穿电流的电子和空穴成分
Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia;
Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia;
Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia;
Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung 40132, Indonesia;
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi- Hiroshima 739-8530, Japan;
Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashi- Hiroshima 739-8530, Japan,Present address: Department of Electronics, Nagoya University, Japan;
机译:关于具有极端界面层缩放的
机译:具有垂直垂直动能分量和各向异性质量的MOS电容器中超薄栅极氧化物的电子直接隧穿电流分析
机译:从直接隧穿区到福勒-诺德海姆区的p〜+聚栅极p沟道p沟道金属氧化物半导体场效应晶体管中的电子隧穿成分分析
机译:高k电介质栅极堆叠的各向异性金属氧化物半导体电容中透射率与隧道电流的影响
机译:机械应力对硅和锗金属氧化物半导体器件的影响:沟道迁移率,栅极隧穿电流,阈值电压和栅极堆叠
机译:基于GaMnAs的垂直自旋金属氧化物半导体场效应晶体管中的侧栅电场引起的大电流调制和隧穿磁阻变化
机译:通过平行垂直动能分量和各向异性块的MOS电容器中通过非常薄栅极氧化物的电子直接隧道电流分析