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首页> 外文期刊>Journal of Applied Physics >Effect of B_2O_3-Bi_2O_3-SiO_2-ZnO glass on the dielectric and magnetic properties of ferroelectric/ferromagnetic composite for low temperature cofired ceramic technology
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Effect of B_2O_3-Bi_2O_3-SiO_2-ZnO glass on the dielectric and magnetic properties of ferroelectric/ferromagnetic composite for low temperature cofired ceramic technology

机译:B_2O_3-Bi_2O_3-SiO_2-ZnO玻璃对低温共烧陶瓷技术中铁电/铁磁复合材料介电和磁性能的影响

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摘要

Ni-Cu-Zn ferrite/BaTiO_3 composites with different additive amounts of B_2O_3-Bi_2O_3-SiO_2-ZnO (BBSZ) glass have been prepared by a conventional solid-reaction method and sintered at 900℃ to adapt to low temperature cofired ceramic (LTCC) technology. The dielectric and magnetic properties of the composites can be effectively improved with increasing BBSZ content. Here, the BBSZ glass mainly plays two roles, one is as a sintering aid promoting grain growth and the other is as a low permittivity phase or nonmagnetic phase leading to dilution effect on the dielectric or magnetic properties of the composites. The effect degree of above two roles is related to the variation in BBSZ content and has been discussed combining with the effective medium theory. The lower and upper bounds for the effective permittivity and permeability have been given by the Maxwell-Garnett rules.
机译:采用常规固相反应方法制备了添加量不同的B_2O_3-Bi_2O_3-SiO_2-ZnO(BBSZ)玻璃的Ni-Cu-Zn铁氧体/ BaTiO_3复合材料,并在900℃下烧结以适应低温共烧陶瓷(LTCC)。技术。随着BBSZ含量的增加,可以有效地改善复合材料的介电和磁性能。在此,BBSZ玻璃主要起两个作用,一个是作为促进晶粒生长的烧结助剂,另一个是作为低介电常数相或非磁性相,从而导致对复合材料的介电或磁性的稀释作用。以上两种作用的影响程度与BBSZ含量的变化有关,并结合有效介质理论进行了讨论。有效介电常数和磁导率的上限和下限由麦克斯韦-加纳特规则给出。

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  • 来源
    《Journal of Applied Physics》 |2010年第2期|P.09D911.1-09D911.3|共3页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    rnState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    rnState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    rnState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    rnState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    rnState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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