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机译:p型InN的电学和光学性质
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA,Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA,Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA,Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA;
机译:INN晶体习惯,结构,电气和光学性质受到在N-POAR INN / INALN异质结构中的蓝宝石衬底氮化影响
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机译:GaN,AlN和InN中铁的电学和光学性质
机译:在O_2大气中在低温(300°C)下的Movpe Inn的电气和光学性能的显着改善
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