Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

摘要

Threading dislocations that are of a type were observed to form locally in InGaN layers and wells containing 7%-15% indium. Direct correlations between a type dislocations and stacking faults in InGaN layers and wells were observed. The formation of these dislocations is attributed to the dissociation of Shockley partials bounding the stacking faults.