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Incoherent effect of Fe and Ni substitutions in the ferromagnetic-insulator La_(0.6)Bi_(0.4)MnO_(3+δ)

机译:铁磁绝缘子La_(0.6)Bi_(0.4)MnO_(3 +δ)中Fe和Ni的非相干效应

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摘要

A comparative study of the effect of Fe and Ni doping on the bismuth based perovskite La_(0.6)Bi_(0.4)MnO_(3.1), a projected spintronics magnetic semiconductor has been carried out. The doped systems show an expressive change in magnetic ordering temperature. However, the shifts in ferromagnetic transition (T_c) of these doped phases are in opposite direction with respect to the parent phase T_c of 115 K. The Ni-doped phase shows an increase in T_c ~200 K, whereas the Fe-doped phase exhibits a downward shift to T_c~95 K. Moreover, the Fe-doped is hard-type whereas the Ni-doped compound is soft-type ferromagnet. It is observed that the materials are semiconducting in the ferromagnetic phase with activation energies of 77 & 82 meV for Fe & Ni-doped phases, respectively. In the presence of external magnetic field of 7 T, they exhibit minor changes in the resistivity behaviors and the maximum isothermal magnetoresistance is around -20% at 125 K for the Ni-phase. The results are explained on the basis of electronic phase separation and competing ferromagnetic and antiferromagnetic interactions between the various mixed valence cations.
机译:对Fe和Ni掺杂对铋基钙钛矿La_(0.6)Bi_(0.4)MnO_(3.1)的影响进行了比较研究,该投影电子自旋电子半导体。掺杂的系统在磁序温度上表现出明显的变化。然而,相对于母相T_c为115 K,这些掺杂相的铁磁跃迁(T_c)的变化方向相反。Ni掺杂相显示出T_c〜200 K的增加,而Fe掺杂相显示出下降到T_c〜95K。而且,Fe掺杂为硬型,Ni掺杂为软型铁磁体。可以看出,材料在铁磁相中是半导体,对于铁和镍掺杂相,其激活能分别为77和82 meV。在存在7 T的外部磁场的情况下,Ni相在125 K时的电阻率行为变化很小,并且最大等温磁阻约为-20%。基于电子相分离以及各种混合价阳离子之间竞争性铁磁和反铁磁相互作用的解释结果。

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  • 来源
    《Journal of Applied Physics》 |2011年第7期|p.073904.1-073904.6|共6页
  • 作者单位

    Indian Institute of Information Technology Design & Manufacturing, Dumna Airport Road, Jabalpur - 482005, India;

    Department of Chemistry, Visva-Bharati University, Santiniketan-731235, India;

    Indian Institute of Information Technology Design & Manufacturing, Dumna Airport Road, Jabalpur - 482005, India;

    Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi-11016, India;

    Department of Physics, Indian Institute of Technology, Hauz Khas, New Delhi-11016, India;

    CRISMAT Laboratory, ENSICAEN UMR6508, 6 Bd Marechal Juin, Cedex 4, Caen-14050, France;

    CRISMAT Laboratory, ENSICAEN UMR6508, 6 Bd Marechal Juin, Cedex 4, Caen-14050, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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