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Nitrogen doping-induced rectifying behavior with large rectifying ratio in graphene nanoribbons device

机译:石墨烯纳米带装置中氮掺杂诱导的大整流比整流行为

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摘要

By applying nonequilibrium Green's functions in combination with density-function theory, we investigate the electronic transport properties of armchair graphene nanoribbons devices with one undoped and one nitrogen-doped armchair graphene nanoribbons electrode. For the doped armchair graphene nanoribbons electrode, an N dopant is considered to substitute the center or edge carbon atom. The results show that the electronic transport properties are strongly dependent on the width of the ribbon and the position of the N dopant. The rectifying behavior with large rectifying ratio can be observed and can be modulated by changing the width of the ribbon or the position of the N dopant. A mechanism for the rectifying behavior is suggested.
机译:通过将非平衡格林函数与密度泛函理论相结合,我们研究了带有一个未掺杂和一个氮掺杂的扶手椅石墨烯纳米带电极的扶手椅石墨烯纳米带器件的电子传输性能。对于掺杂的扶手椅状石墨烯纳米带电极,考虑使用N掺杂剂替代中心碳原子或边缘碳原子。结果表明,电子传输性能在很大程度上取决于带的宽度和N掺杂剂的位置。可以观察到具有大整流比的整流行为,并且可以通过改变带的宽度或N掺杂剂的位置来对其进行调节。提出了纠正行为的机制。

著录项

  • 来源
    《Journal of Applied Physics 》 |2011年第12期| p.897-901| 共5页
  • 作者单位

    Department of Applied Physics, Hunan University and Key Lab for Micro-Nano Physics and Technology of Hunan Province, Changsha 410082, China;

    Department of Applied Physics, Hunan University and Key Lab for Micro-Nano Physics and Technology of Hunan Province, Changsha 410082, China;

    Department of Applied Physics, Hunan University and Key Lab for Micro-Nano Physics and Technology of Hunan Province, Changsha 410082, China;

    Department of Applied Physics, Hunan University and Key Lab for Micro-Nano Physics and Technology of Hunan Province, Changsha 410082, China;

    Department of Applied Physics, Hunan University and Key Lab for Micro-Nano Physics and Technology of Hunan Province, Changsha 410082, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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