Electron and hole drift velocity in chemical vapor deposition diamond

摘要

The time-of-flight technique has been used to measure the drift velocities for electrons and holes in high-purity single-crystalline CVD diamond. Measurements were made in the temperature interval 83 ≤ T ≤ 460 K and for electric fields between 90 and 4 × 10~3 V/cm, applied in the (100) crystallographic direction. The study includes low-field drift mobilities and is performed in the low-injection regime to perturb the applied electric field only minimally.