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机译:Si钝化对HfO_2 / GaAs界面原子键合和电子性能的影响:第一性原理研究
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA,Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA,Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, USA;
机译:硫钝化对HfO_2 / GaAs界面的影响:第一性原理研究
机译:SrTiO_3 / GaAs界面的原子尺度结构和电子性质:STEM-EELS和第一性原理的组合
机译:SRTIO3 / GAAS接口的原子尺度结构和电子性质:螺旋鳗和第一原理研究
机译:HfO_2 / GaAs体系中的原子层沉积(ALD)NH_3氮化对Al_2O_3钝化的影响
机译:首先研究尺寸和外部电场对氮化镓纳米结构的原子和电子性质的影响。
机译:过渡元件添加对Al(111)/ 6H-SiC(0001)界面的界面相互作用和电子结构的影响:第一原理研究
机译:氮掺杂对具有不同sp(2)末端的小碳原子链的电子性质的影响:第一性原理研究