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First-principles study of electronic structure and magnetic properties of Cu-doped CeO_2

机译:掺杂Cu的CeO_2的电子结构和磁性的第一性原理研究

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摘要

48%We performed first-principles calculations within density-functional theory to study the origin of the magnetism in Cu-doped CeO_2. We show that the electron spin-polarization and the magnetic coupling are sensitive to the defect structures in Cu-doped CeO_2. The substitution of a Cu atom for a Ce atom (Cu_(Ce)) induces a local magnetic moment of 3.00 μb around per impurity, but the magnetic coupling between local magnetic moments is very weak. The defect complex consisting of a Cu_(Ce) and a nearest-neighbor oxygen vacancy (V_o) has low formation energy and thus high plausibility in Cu-doped CeO_2. Although the local magnetic moment triggered by the Cu_(Ce)-V_o complex is only 1.00 μb per complex, strong ferromagnetic coupling between the defect complexes is achieved which can be attributed to a magnetic coupling chain formed by the strong p-d interaction between Cu and host O atoms.
机译:48%我们在密度泛函理论中进行了第一性原理计算,以研究掺杂Cu的CeO_2中磁性的起源。我们表明,电子自旋极化和磁耦合对掺杂Cu的CeO_2中的缺陷结构敏感。用Cu原子代替Ce原子(Cu_(Ce))会在每个杂质周围引起3.00μb的局部磁矩,但是局部磁矩之间的磁耦合非常弱。由Cu_(Ce)和最近邻的氧空位(V_o)组成的缺陷复合物具有较低的形成能,因此在掺杂Cu的CeO_2中具有较高的可信度。尽管由Cu_(Ce)-V_o络合物触发的局部磁矩仅为1.00μb,但缺陷络合物之间实现了强铁磁耦合,这可以归因于Cu与主体之间的强pd相互作用形成的磁耦合链O原子。

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  • 来源
    《Journal of Applied Physics》 |2012年第8期|083702.1-083702.5|共5页
  • 作者单位

    School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China;

    School of Physics and Technology, University of Jinan, Jinan, Shandong 250022, People's Republic of China;

    School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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