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机译:使用Ⅰ-ⅤI和深能级瞬态光谱技术研究n型4H和6H碳化硅衬底上导电聚合物中的深层缺陷
Pos-Graduacao em Ciencia de Materials, Universidade Federal de Pernambuco, Av. Professor Lull Freire sin, 50670-901 Recife, PE, Brazil,School of Physics and Astronomy, Nottingham Nanotechnology and Nanosclence Center,University of Nottingham, Nottingham NG7 2RD, United Kingdom;
School of Physics and Astronomy, Nottingham Nanotechnology and Nanosclence Center,University of Nottingham, Nottingham NG7 2RD, United Kingdom;
Pos-Graduacao em Ciencia de Materials, Universidade Federal de Pernambuco, Av. Professor Lull Freire sin, 50670-901 Recife, PE, Brazil;
Group of Organic Optoelectronic Devices, Departamento de Fi'sica, Universidade Federal do Parana,Caixa Postal 19044, 81531-990 Curitiba PR, Brazil;
Group of Organic Optoelectronic Devices, Departamento de Fi'sica, Universidade Federal do Parana,Caixa Postal 19044, 81531-990 Curitiba PR, Brazil;
Pos-Graduacao em Ciencia de Materials, Universidade Federal de Pernambuco, Av. Professor Lull Freire sin, 50670-901 Recife, PE, Brazil,Departamento de Quimlca Fundamental, Universidade Federal de Pernambuco, Cidade Unlversltdria,50670-901 Recife, PE, Brazil;
Pos-Graduacao em Ciencia de Materials, Universidade Federal de Pernambuco, Av. Professor Lull Freire sin, 50670-901 Recife, PE, Brazil,Departamento de Fisica, Universidade Federal de Pernambuco, Cidade Universitdria, 50670-901 Recife,PE, Brazil;
School of Physics and Astronomy, Nottingham Nanotechnology and Nanosclence Center,University of Nottingham, Nottingham NG7 2RD, United Kingdom;
School of Physics and Astronomy, Nottingham Nanotechnology and Nanosclence Center,University of Nottingham, Nottingham NG7 2RD, United Kingdom;
机译:使用I-V和深层瞬态光谱技术研究n型4H和6H碳化硅衬底上导电聚合物中的深层缺陷
机译:深层瞬态光谱和等时退火研究研究n型4H-碳化硅外延层的深层
机译:使用透明导电聚合物肖特基接触的独立式n-GaN衬底中深层缺陷的光电容光谱研究
机译:正电子An没和深层瞬态光谱研究的4H和6H-SiC外延层中的辐射诱导缺陷
机译:使用导纳光谱法研究半绝缘4H和6H碳化硅的深层缺陷
机译:在(100)和(311)B GaAs衬底上生长的GaAs / AlGaAs多量子阱的深层瞬态光谱
机译:使用深层瞬态光谱法(DLTS)技术研究InGaAs量子线中带太阳能电池中的电活性缺陷
机译:用深能瞬态光谱法比较n型和p型GaasN中的显性电子陷阱能级