Mechanism of random telegraph noise in junction leakage current of metal-oxide-semiconductor field-effect transistor

摘要

Evidence is given for the mechanism of hole-trap-related random telegraph noise (RTN) in reverse-biased junction leakage current occurring in the off-state of sub-micron scaled metal-oxide-semiconductor field-effect transistor (MOSFET). It was found that such RTN in junction leakage current, namely, variable junction leakage (VJL), is induced by applying hole-accumulation bias to the gate of the MOSFET. This result indicates that a hole captured in the gate oxide near the silicon surface influences the channel surface potential and causes fluctuation in generation-recombination (g-r) current generated at interface states. The fluctuation in g-r current is observed as VJL. It was also found that occurrence rate of VJL increases under hot-carrier stress. On the basis of these results, a model for VJL that can more concretely explain the mechanism of VJL quantitatively was developed.