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Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magnetic field

机译:零外加磁场下单个InAs量子点中电子自旋弛豫的温度依赖性

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摘要

The temperature-dependent electron spin relaxation of positively charged excitons in a single InAs quantum dot was measured by time-resolved photoluminescence spectroscopy at zero applied magnetic fields. The experimental results show that the electron-spin relaxation is clearly divided into two different temperature regimes: (i) at T<50K, spin relaxation depends on the dynamical nuclear spin polarization and is approximately temperature-independent, as predicted by Merkulov et al. [Phys. Rev. B 65, 205309 (2002)] (ii) T> about 50 K, spin relaxation speeds up with increasing temperature. A model of a two longitudinal optical phonon scattering process coupled with hyperfine interaction is proposed to account for the accelerated electron spin relaxation at higher temperatures.
机译:在零个施加磁场下,通过时间分辨光致发光光谱法测量了单个InAs量子点中带正电荷的激子的温度依赖性电子自旋弛豫。实验结果表明,电子自旋弛豫明显分为两个不同的温度范围:(i)在T <50K时,自旋弛豫取决于动态核自旋极化,并且近似独立于温度,如Merkulov等人所预测。 [物理Rev. B 65,205309(2002)](ii)T>约50 K,自旋弛豫随温度升高而加快。提出了两个纵向光学声子散射过程与超精细相互作用耦合的模型,以解释在较高温度下加速的电子自旋弛豫。

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  • 来源
    《Journal of Applied Physics》 |2012年第5期|p.053524.1-053524.5|共5页
  • 作者单位

    SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, China;

    SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, China;

    SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, China;

    SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, China;

    SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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