X-ray irradiation induced changes in electron transport in stabilized a-Se photoconductors

摘要

We have examined the effect or high-dose x-ray irradiation on electron transport in stabilized amorphous selenium (a-Se) x-ray photoconductive films (of the type used in x-ray image detectors) by measuring the electron lifetime τ_e through interrupted-field time-of-flight experiments. X-ray induced effects have been examined through two types of experiments. In recovery experiments, the a-Se was preirradiated with and without an applied field (5V/μm) during irradiation with sufficient dose (typically ~20 Gy at 21℃) to significantly reduce the electron lifetime by ~50%, and then the recovery of the lifetime was monitored as a function of time at three 'different temperatures, 10 ℃, 21 ℃, and 35 ℃. The lifetime recovery kinetics was exponential with a relaxation time τ_r that is thermally activated with an activation energy of 1.66 eV. τ_r is a few hours at 21 ℃ and only a few minutes at 35 ℃. In experiments examining the irradiation induced effects, the a-Se film was repeatedly exposed to x-ray radiation and the changes in the drift mobility and lifetime were monitored as a function of accumulated dose D. There was no observable change in the drift mobility. At 21 ℃, the concentration of x-ray induced deep traps (or capture centers), N_d, increases linearly with D (N_d ~ D) whereas at 35 ℃, the recovery process prevents a linear increase in N_d with D, and N_d saturates. In all cases, even under high dose irradiation (~50 Gy), the lifetime was recoverable to its original equilibrium (pre-exposure) value within a few relaxation times.