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机译:SrTiO_3缓冲Ⅲ-Ⅴ半导体GaAs上Mn掺杂BiFeO_3薄膜的异质外延生长和多铁性。
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong,Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong;
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, People's Republic of China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, People's Republic of China;
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong;
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong;
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong;
机译:PLD沉积在LaNiO_3缓冲SrTiO_3(0 0 1)和(111)衬底上的BiFeO_3薄膜的生长和性能
机译:锰铁掺杂BiFeO_3薄膜的相变,漏导机理演变及铁电性能增强
机译:Mn掺杂BiFeO_3薄膜的结构转变和多铁性
机译:BIFEO_3 / COFE_2O_4异质结构薄膜沉积(111)SRTIO_3
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机译:GaAs(001)上生长的高质量100 nm厚InSb膜具有InxAl1-xSb连续渐变缓冲层的基板
机译:SrTiO3缓冲III-V半导体GaAs上Mn掺杂BiFeO 3薄膜的异质外延生长和多铁性