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首页> 外文期刊>Journal of Applied Physics >Heteroepitaxial growth and multiferroic properties of Mn-doped BiFeO_3 films on SrTiO_3 buffered Ⅲ-Ⅴ semiconductor GaAs
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Heteroepitaxial growth and multiferroic properties of Mn-doped BiFeO_3 films on SrTiO_3 buffered Ⅲ-Ⅴ semiconductor GaAs

机译:SrTiO_3缓冲Ⅲ-Ⅴ半导体GaAs上Mn掺杂BiFeO_3薄膜的异质外延生长和多铁性。

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摘要

Epitaxial Mn-doped BiFeO_3 (MBFO) thin films were grown on GaAs (001) substrate with SrTiO_3 (STO) buffer layer by pulsed laser deposition. X-ray diffraction results demonstrate that the films show pure (001) orientation, and MBFO (100)//STO(100), whereas STO (100)//GaAs (110). Piezoresponse force microscopy images and polarization versus electric field loops indicate that the MBFO films grown on GaAs have an effective ferroelectric switching. The MBFO films exhibit good ferroelectric behavior (2P_Γ ~ 92 μC/cm~2 and 2EC ~ 372 kV/cm). Ferromagnetic property with saturated magnetization of 6.5 emu/cm~3 and coercive field of about 123 Oe is also found in the heterostructure at room temperature.
机译:通过脉冲激光沉积,在具有SrTiO_3(STO)缓冲层的GaAs(001)衬底上生长外延掺杂Mn的BiFeO_3(MBFO)薄膜。 X射线衍射结果表明,薄膜显示纯(001)取向,MBFO(100)// STO(100),而STO(100)// GaAs(110)。压电响应力显微镜图像以及极化与电场环路表明,在GaAs上生长的MBFO薄膜具有有效的铁电开关。 MBFO薄膜具有良好的铁电性能(2P_Γ〜92μC/ cm〜2和2EC〜372 kV / cm)。在室温下的异质结构中,还发现了饱和磁化强度为6.5 emu / cm〜3,矫顽场约为123 Oe的铁磁性能。

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  • 来源
    《Journal of Applied Physics》 |2013年第9期|094106.1-094106.5|共5页
  • 作者单位

    Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong,Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong;

    Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong,State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, People's Republic of China;

    Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong;

    Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong;

    Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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