Diode assisted giant positive magnetoresistance in n-type GaAs at room temperature

摘要

We have investigated a diode-assisted GaAs based magnetoresistance (MR) effect at room temperature. It is found that the introduction of diode effectively enhanced the MR effect of the GaAs device, and the MR increases with increasing the length/width ratio of the device. The MR can be achieved to about 2600% at 1.2 T with a high MR sense ability of about 44% at 0.06 T and an extremely low energy consumption of sub-micro Watt. This work may open a new way for the practical application of the semiconductor based magnetic sensing industry.