Finite element simulations of graphene based three-terminal nanojunction rectifiers

摘要

Electrical rectification in graphene-based three-terminal nanojunctions is simulated using the finite element method. The model is based on diffusive charge carrier transport in a field-effect transistor configuration. The influence of device geometry, temperature, and electric potential disorder on the rectification efficiency is calculated. For a typical realistic device on a Si/SiO_2 substrate, the model yields a room temperature efficiency of about 1% at a bias of 100 mV. The calculations are compared to previously published experimental results.