Hysteresis in the conductance of asymmetrically biased GaAs quantum point contacts with in-plane side gates

摘要

We have observed hysteresis between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of an asymmetrically biased GaAs quantum point contact (QPC). The size of the hysteresis loop increases with the amount of bias asymmetry ΔV_g between the two side gates and depends on the polarity of ΔV_g. Our results are in qualitative agreement with Non-Equilibrium Green's Function simulations including the effects of dangling bond scattering on the sidewalls of the QPC. It is argued that hysteresis may constitute another indirect proof of spontaneous spin polarization in the narrow portion of the QPC.