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Annealing effect and under/capping layer study on Co/Ni multilayer thin films for domain wall motion

机译:Co / Ni多层薄膜在畴壁运动中的退火效应和下盖层研究

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摘要

Co/Ni multilayer structure with Perpendicular Magnetic Anisotropy (PMA) is considered to be one of the most promising film structures for current-driven domain wall motion. In this work, the field annealing effect on Co/Ni multilayer films with different underlayers is studied. The annealing temperature ranges from 250 ℃ to 375 ℃. The effect of Pt capping layer is also investigated. It was found that the annealing process influences magnetic properties of Co/Ni multilayers with different underlayers differently. For Co/Ni multilayers with Ni underlayer, no PMA is observed in the as-deposited state, but they become perpendicular after annealing, and the effective perpendicular magnetic anisotropy (K~(eff)) increases linearly with annealing temperature. The origin of the K~(eff) increase is discussed. For Co/Ni multilayers with Pt underlayers, large PMA is observed for as-deposited films; however, K~(eff) decreases after annealing. The effects of interfacial lattice mismatch, roughness, and impurities to surface anisotropy are discussed. It was also found that with Pt underlayer, the presence of a thin Pt capping layer is crucial for Co/Ni multilayers to cancel the in-plane Rashba field and stabilize the current-driven domain wall motion.
机译:具有垂直磁各向异性(PMA)的Co / Ni多层结构被认为是电流驱动畴壁运动最有前途的薄膜结构之一。在这项工作中,研究了具有不同底层的Co / Ni多层膜的场退火效应。退火温度范围为250℃至375℃。还研究了Pt覆盖层的作用。发现退火工艺对具有不同底层的Co / Ni多层膜的磁性能的影响不同。对于具有Ni底层的Co / Ni多层膜,在沉积状态下未观察到PMA,但是退火后它们变为垂直,并且有效垂直磁各向异性(K〜(eff))随退火温度线性增加。讨论了K(eff)增加的原因。对于带有Pt底层的Co / Ni多层膜,沉积膜的PMA较大;但是,退火后K〜(eff)降低。讨论了界面晶格失配,粗糙度和杂质对表面各向异性的影响。还发现对于Pt底层,薄的Pt覆盖层的存在对于Co / Ni多层膜抵消面内Rashba场并稳定电流驱动的畴壁运动至关重要。

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  • 来源
    《Journal of Applied Physics》 |2013年第2期|17C116.1-17C116.3|共3页
  • 作者单位

    Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA;

    Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA;

    Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA;

    Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA;

    Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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