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Shape designing for light extraction enhancement bulk-GaN light-emitting diodes

机译:用于光提取增强体GaN发光二极管的形状设计

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摘要

Light extraction efficiency enhancement of bulk GaN light-emitting diodes (LEDs) in the shape of truncated-pyramid has been investigated. Compared with the reference LEDs, an enhancement of up to 46% on the light output power from rectangle-shaped LEDs chip with the inclination angle (~44°) has been observed. Compared with the common triangle-shaped and hexagon-shaped LEDs, large size of conventional rectangular LEDs shaped with truncated-pyramid shows more obvious enhancement in light extraction efficiency. In addition, the ray-tracing simulations results show that light extraction efficiency was influenced not only by inclination angle but also by dimension size.
机译:研究了截断金字塔形状的块状GaN发光二极管(LED)的光提取效率提高。与参考LED相比,观察到矩形LED芯片的倾斜角度(〜44°)可使光输出功率提高46%。与普通的三角形和六边形LED相比,大尺寸的传统截断金字塔形矩形LED在光提取效率上有更明显的提高。此外,光线跟踪仿真结果表明,光的提取效率不仅受倾斜角度的影响,还受尺寸大小的影响。

著录项

  • 来源
    《Journal of Applied Physics》 |2013年第24期|243104.1-243104.6|共6页
  • 作者单位

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China,Department of Physics, Tsinghua University, Beijing 100084, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;

    Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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