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机译:用于光提取增强体GaN发光二极管的形状设计
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China,Department of Physics, Tsinghua University, Beijing 100084, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China;
机译:体基GaN体积紫光发光二极管的高光提取效率
机译:体基GaN体积紫光发光二极管的高光提取效率
机译:发光二极管:使用波纹状聚合物纳米球模板化的PEDOT:PSS层,同时提高有机发光二极管的光提取和器件稳定性(Adv。Energy Mater。8/2014)
机译:通过光电化学侧壁整形过程提高IngaN发光二极管的光提取效率
机译:高效发光二极管中增强电流扩散和光提取的新型材料和制造技术
机译:使用银纳米颗粒嵌入的ZnO薄膜增强InGaN / GaN发光二极管的光提取效率
机译:用于光提取增强体GaN发光二极管的形状设计