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机译:GaAsN / GaAs量子阱中带隙和电子有效质量的验证:光谱实验与10波段k·p建模
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw,Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw,Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw,Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw,Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw,Poland;
Technische Physik, Physikalisches Institut and Wilhelm-Conrad-Roentgen-Research Center for Complex Material Systems, University of Wuerzburg, Am Hubland, D-97074 Wuerzburg, Germany;
Technische Physik, Physikalisches Institut and Wilhelm-Conrad-Roentgen-Research Center for Complex Material Systems, University of Wuerzburg, Am Hubland, D-97074 Wuerzburg, Germany;
Technische Physik, Physikalisches Institut and Wilhelm-Conrad-Roentgen-Research Center for Complex Material Systems, University of Wuerzburg, Am Hubland, D-97074 Wuerzburg, Germany;
Technische Physik, Physikalisches Institut and Wilhelm-Conrad-Roentgen-Research Center for Complex Material Systems, University of Wuerzburg, Am Hubland, D-97074 Wuerzburg, Germany;
机译:通过10波段,8波段和6波段k·p模型计算的In_xGa_(1-x)As_(1-y)N_y / GaAs量子阱的电子能带结构和光学透明条件的比较
机译:具有8波段和10波段k中心点p模型的InGaAsN / GaAs / GaAsP多量子阱激光器的光学特性研究
机译:在10波段和8波段kp模型中建模的GaInNAs / GaAs量子阱的波段结构和光学增益
机译:通过10波段k / spl中点/ p理论对InGaAsN / GaAs(N)量子点进行建模
机译:验证GaAsN / GaAs量子阱中的带隙和电子有效质量:光谱实验与10波段k.p建模
机译:非矩形量子阱作为研究Gaas-Ga(1-x)al(x)as界面带偏移的基础