...
机译:缺陷引起的4H-SiC肖特基势垒二极管粒子探测器的性能下降
Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan;
Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan School of Physics, University of Melbourne, Victoria 3010. Australia;
Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka,Kanagawa 240-0196, Japan;
Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka,Kanagawa 240-0196, Japan;
Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka,Kanagawa 240-0196, Japan;
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba,Ibaraki 305-8568, Japan;
Japan Atomic Energy Agency (JAEA), 1233 Watanuki, Takasaki, Gunma 370-1292, Japan;
机译:缺陷引起的4H-SiC肖特基势垒二极管粒子探测器的性能下降
机译:4H-SiC肖特基势垒二极管,结屏障肖特基二极管和引脚二极管的温度传感性能比较
机译:高流量中子辐射中Ni / 4H-SiC肖特基二极管中子探测器的性能劣化和缺陷表征
机译:使用α粒子检测到的低掺杂4H-SiC肖特基势垒二极管中的缺陷水平
机译:肖特基势垒二极管及其作为肖特基势垒电阻的应用
机译:Ni / 4H-SiC肖特基二极管辐射探测器的制造与表征其敏感面积高达4 cm2
机译:Ni / 4H-siC肖特基势垒二极管对不同能量的α粒子辐照的响应