机译:用于蓝绿色转换器结构的极性和半极性InGaN / GaN量子阱的光吸收
Institute of Quantum Matter/Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany;
Institute of Quantum Matter/Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany;
Institute of Quantum Matter/Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany;
Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany;
Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany;
Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, 89069 Ulm, Germany;
机译:用于蓝绿色转换器结构的极性和半极性InGaN / GaN量子阱的光吸收
机译:结构化半极性表面上的蓝色和绿色InGaN / GaN量子阱发射特性
机译:c平面和半极性GaN结构上的Mg掺杂层和InGaN量子阱的光吸收
机译:研究极性InGaN / GaN量子异质结构中的激子效应以增强蓝色中的量子电吸收
机译:极性InGaN / GaN量子阱结构的光学研究
机译:掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
机译:研究极性InGaN / GaN量子异质结构中的激子效应以增强蓝色中的量子电吸收