Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

摘要

The fabrication of nano-scale NiSi-Si Schottky barrier diode by rapid thermal annealing process is reported. The characterization of the nano-scale NiSi film was performed using Micro-Raman Spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The thickness of the film (27 nm) has been measured by cross-sectional Secondary Electron Microscopy and XPS based depth profile method. Current-voltage (I-V) characteristics show an excellent rectification ratio (I_(ON)/I_(OFF) = 10~5) at a bias voltage of ± 1V. The diode ideality factor is 1.28. The barrier height was also determined independently based on Ⅰ-Ⅴ (0.62 eV) and high frequency capacitance-voltage technique (0.76 eV), and the correlation between them has explained. The diode photo-response was measured in the range of 1.35-2.5 μm under different reverse bias conditions (0.0-1.0 V). The response is observed to increase with increasing reverse bias. From the photo-responsivity study, the zero bias barrier height was determined to be 0.54 eV.