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首页> 外文期刊>Journal of Applied Physics >Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross
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Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross

机译:自旋波正常模式的微磁模拟和自旋传递转矩驱动的铁磁交叉的磁化动力学

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摘要

We studied spin-transfer-torque (STT) switching of a cross-shaped magnetic tunnel junction in a recent report [Roy et al., J. Appl. Phys. 113, 223904 (2013)]. In that structure, the free layer is designed to have four stable energy states using the shape anisotropy of a cross. STT switching showed different regions with increasing current density. Here, we employ the micromagnetic spectral mapping technique in an attempt to understand how the asymmetry of cross dimensions and spin polarization direction of the injected current affect the magnetization dynamics. We compute spatially averaged frequency-domain spectrum of the time-domain magnetization dynamics in the presence of the current-induced STT term. At low currents, the asymmetry of polarization direction and that of the arms are observed to cause a splitting of the excited frequency modes. Higher harmonics are also observed, presumably due to spin-wave wells caused by the regions of spatially non-uniform effective magnetic field. The results could be used towards designing a multi-bit-per-cell STT-based random access memory with an improved storage density.
机译:在最近的报告中,我们研究了十字形磁性隧道结的自旋转移转矩(STT)开关[Roy等,J。Appl。物理113,223904(2013)]。在该结构中,自由层被设计为使用十字的形状各向异性具有四个稳定的能态。 STT开关显示随着电流密度增加而出现的不同区域。在这里,我们采用微磁频谱映射技术,试图了解注入电流的横截面尺寸和自旋极化方向的不对称性如何影响磁化动力学。我们在存在电流感应STT项的情况下计算时域磁化动力学的空间平均频域频谱。在低电流下,观察到极化方向和臂的极化方向的不对称会导致激发频率模式的分裂。还观察到更高的谐波,大概是由于空间不均匀有效磁场区域引起的自旋波阱引起的。结果可用于设计具有提高的存储密度的基于每单元多位STT的随机存取存储器。

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  • 来源
    《Journal of Applied Physics》 |2014年第3期|17D123.1-17D123.3|共3页
  • 作者单位

    Microelectronics Research Center, University of Texas at Austin, Texas 78758, USA;

    Microelectronics Research Center, University of Texas at Austin, Texas 78758, USA;

    Physics Department, University of Texas at Austin, Texas 78712, USA;

    Microelectronics Research Center, University of Texas at Austin, Texas 78758, USA;

    Microelectronics Research Center, University of Texas at Austin, Texas 78758, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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