Integrated memory i.e. Dynamic RAM, module, for selective writing and reading of data bits, has amplifier-selection circuit switched between normal and test modes to switch all amplifiers in normal mode and preselected subsets in test mode

摘要

The module has a cell field (CF1) comprising binary storage cells forming a matrix of lines and columns, and an access circuit with a bistable read amplifier (SA) attached to the columns. The access circuit evaluates a binary condition of memory cells lying in an address line, of the columns over a bit line in a switched condition. An amplifier-selection circuit is switched between a normal mode and a test mode to simultaneously switch all amplifiers attached to the cell field in the normal mode and preselected subsets of the amplifiers in the test mode.