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Dual band complementary metamaterial absorber in near infrared region

机译:近红外区双波段互补超材料吸收体

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摘要

In this paper, we present the dual band absorption characteristics of complementary metamaterial absorber in near infrared (1.3-2.5 /xm) region. The dual band absorption is caused by two distinct resonance mechanisms—electrical resonance and cavity resonance. Electrical resonance occurs in the metal layer—top complementary metamaterial and the cavity resonance occurs in the spacer cavity'formed between the top complementary metamaterial and bottom metal reflector layers. In order to elucidate the resonant mechanisms and study the effects of geometrical variations on both the resonant absorption behaviours, two sets of experiment were performed. It was seen that with increasing complementary metamaterial pattern dimension, the electrical resonance absorption peak showed a blue shift, while the cavity resonance showed a slight red shift. However, on the other hand, for the increase in spacer thickness, the cavity resonance peak showed a strong red shift, while the electrical resonance peak remained uninfluenced. The reason for these geometrical dependencies, for both resonances, is conceptually analysed. Furthermore, the design was optimized to attain single absorption band by engineering the cavity and electrical resonances to be at the same wavelength. The single absorption band was successfully realized, however, the peak wavelength showed a red shift from the electrical resonance as in dual band absorber case. The reason for the shift was further explored to be caused due to the strong coupling of electrical and cavity resonances. This approach of utilizing different resonant mechanisms for absorption at different wavelengths provides the means to achieve multiband absorbers, using a simple design and low cost fabrication process.
机译:在本文中,我们介绍了互补超材料吸收体在近红外(1.3-2.5 / xm)区域的双波段吸收特性。双频带吸收是由两种不同的共振机制引起的:电共振和腔共振。电气共振发生在金属层-顶部互补超材料中,而腔共振发生在顶部互补超材料和底部金属反射层之间形成的间隔腔中。为了阐明共振机理并研究几何变化对共振吸收行为的影响,进行了两组实验。可以看出,随着互补超材料图案尺寸的增加,电共振吸收峰显示出蓝移,而腔共振显示出轻微的红移。然而,另一方面,对于间隔物厚度的增加,腔共振峰显示出强烈的红移,而电共振峰保持不受影响。从概念上分析了两个共振的这些几何相关性的原因。此外,通过将腔体和共振设计为相同的波长,对设计进行了优化,以获得单个吸收带。成功地实现了单吸收带,但是,与双带吸收器情况一样,峰值波长显示出自共振的红移。进一步探讨了产生这种偏移的原因,这是由于电谐振和腔谐振的强耦合引起的。利用简单的设计和低成本的制造工艺,利用不同的共振机制吸收不同波长的这种方法提供了实现多波段吸收体的方法。

著录项

  • 来源
    《Journal of Applied Physics 》 |2014年第19期| 193109.1-193109.6| 共6页
  • 作者单位

    Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576,Institute of Microelectronics, A~*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park Ⅱ, Singapore 117685;

    Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576,Institute of Microelectronics, A~*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park Ⅱ, Singapore 117685;

    Institute of Microelectronics, A~*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park Ⅱ, Singapore 117685;

    Institute of Microelectronics, A~*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park Ⅱ, Singapore 117685;

    Institute of Microelectronics, A~*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Science Park Ⅱ, Singapore 117685;

    Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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