Effect of growth temperature on ballistic electron transport through the Au/Si(001) interface

摘要

Ballistic electron emission spectroscopy was used to investigate electron transport through Au/Si(001) Schottky diodes grown at 35 ℃ and 22 ℃. Aside from a decreased Schottky height, this small increase in temperature introduced an energy dependent scattering component, which was absent in the samples grown at 22 ℃. These differences may be attributed to the increased amount of Au-Si intermixing at the interface. Despite the non-epitaxial nature of the growth technique, strong evidence was found in both sets of samples that indicated the presence of a forward-focused current subject to some degree of parallel momentum conservation at the interface. This evidence was present in all samples grown at 35 ℃, but was only observed in those samples grown at 22 ℃ when the Au films were 10nm or thicker. This sensitivity to growth temperature could account for discrepancies in previous studies on Au/Si(001).