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Enhanced field emission from cerium hexaboride coated multiwalled carbon nanotube composite films: A potential material for next generation electron sources

机译:六硼化铈涂覆的多壁碳纳米管复合膜的增强的场发射:下一代电子源的潜在材料

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摘要

Intensified field emission (FE) current from temporally stable cerium hexaboride (CeB_6) coated carbon nanotubes (CNTs) on Si substrate is reported aiming to propose the new composite material as a potential candidate for future generation electron sources. The film was synthesized by a combination of chemical and physical deposition processes. A remarkable increase in maximum current density, field enhancement factor, and a reduction in turn-on field and threshold field with comparable temporal current stability are observed in CeB_6-coated CNT film when compared to pristine CeB_6 film. The elemental composition and surface morphology of the films, as examined by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray measurements, show decoration of CeB_6 nanoparticles on top and walls of CNTs. Chemical functionalization of CNTs by the incorporation of CeB_6 nanoparticles is evident by a remarkable increase in intensity of the 2D band in Raman spectrum of coated films as compared to pristine CeB_6 films. The enhanced FE properties of the CeB_6 coated CNT films are correlated to the microstructure of the films.
机译:据报道,Si衬底上暂时稳定的六硼化铈(CeB_6)涂层碳纳米管(CNT)的场发射(FE)电流增强,旨在提出这种新型复合材料,作为下一代电子源的潜在候选者。该膜是通过化学和物理沉积工艺的组合来合成的。与原始的CeB_6薄膜相比,在CeB-6涂层的CNT薄膜中观察到最大电流密度,场增强因子的显着增加以及导通场和阈值场的减小,具有可比较的瞬时电流稳定性。如通过扫描电子显微镜,透射电子显微镜和能量色散X射线测量所检查的,膜的元素组成和表面形态显示了在CNT的顶部和壁上的CeB_6纳米颗粒的装饰。与原始的CeB_6膜相比,通过涂膜的拉曼光谱中2D带强度的显着增加,可以证明通过掺入CeB_6纳米颗粒可以实现CNT的化学功能化。 CeB_6涂层的CNT薄膜增强的FE性能与薄膜的微观结构相关。

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  • 来源
    《Journal of Applied Physics》 |2014年第9期|094302.1-094302.6|共6页
  • 作者单位

    Nanostech Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-16, India;

    Nanostech Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi-16, India;

    Semiconductor Physics, Technische Universitaet Chemnitz, 09126 Chemnitz, Germany;

    Department of Chemistry, Indian Institute of Technology Delhi, New Delhi-16, India;

    Semiconductor Physics, Technische Universitaet Chemnitz, 09126 Chemnitz, Germany;

    Semiconductor Physics, Technische Universitaet Chemnitz, 09126 Chemnitz, Germany;

    Department of Chemistry, Indian Institute of Technology Delhi, New Delhi-16, India;

    Semiconductor Physics, Technische Universitaet Chemnitz, 09126 Chemnitz, Germany;

    Material Systems for Nanoelectronics, Technische Universitaet Chemnitz, 09126 Chemnitz, Germany;

    Solid Surfaces Analysis, Technische Universitaet Chemnitz, 09126 Chemnitz, Germany;

    Semiconductor Physics, Technische Universitaet Chemnitz, 09126 Chemnitz, Germany;

    Material Systems for Nanoelectronics, Technische Universitaet Chemnitz, 09126 Chemnitz, Germany ,Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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