Annealing temperature and thickness dependence of magnetic properties in epitaxial L1_0-Mn_(1.4)Ga films

摘要

Mn_(1.4)Ga films with high perpendicular magnetic anisotropy and high crystalline quality were grown on MgO substrates with Cr buffer layer using molecular beam epitaxy. The crystalline structure and the surface morphology of the films have been systematically investigated as functions of in-situ annealing temperature (T_a) and film thickness. It is found that the magnetic properties can be largely tuned by adjusting T_a. As T_a increases, both saturation magnetization (M_s) and uniaxial perpendicular magnetic anisotropy constant (K_u) increase to the maximum values of 612emu/cc and 18Merg/cc at 300℃, respectively, and then decrease. The morphology also changes with T_a, showing a minimum roughness of 2.2 A at T_a = 450 ℃. On the other hand, as the thickness increases, M_s and K_u increase while coercivity decreases, which indicates there is a magnetic dead layer with a thickness of about 1.5 nm at the interfaces. The detailed examination on the surface morphology of the films with various thicknesses shows a complicated film growth process, which can be understood from the relaxation mechanism of the interfacial strain.