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机译:背照式分离吸收和倍增GaN雪崩光电二极管的增益和光响应特性的研究
No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;
No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai, China;
No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai, China;
No. 50 Research Institute of China Electronics Technology Group Corporation, 200331 Shanghai, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;
机译:背照式分离吸收和倍增GaN雪崩光电二极管的增益和光响应特性的研究
机译:背照式分离吸收和倍增GaN雪崩光电二极管
机译:n型AlGaN层在分离和吸收(SAM)GaN / AlGaN雪崩光电二极管的光响应机制中的作用
机译:分别吸收和倍增GaN / AlGaN雪崩光电二极管的光响应模拟
机译:具有高速和高带宽积的谐振腔分离吸收和倍增雪崩光电二极管
机译:高紫外线检测效率的4H-SiC分离吸收电荷和倍增雪崩光电二极管结构的优化策略
机译:具有大器件面积的GaN p-i-n雪崩光电二极管的稳定倍增增益