Optical polarization characteristics of c-plane InGaN/GaN asymmetric nanostructures

摘要

Highly ordered c-plane InGaN/GaN elliptic nanorod (NR) and nano-grating (NG) arrays were fabricated by our developed soft UV-curing nanoimprint lithography on a wafer. The polarized photoluminescence emission from these elliptic NR and NG arrays has been investigated both theoretically and experimentally. Considerable in-plane optical anisotropy, with a polarization ratio of 15% and 71% and a peak shift of 5.2 meV and 28.1 meV, was discovered from these c-plane InGaN/GaN elliptic NR and NG arrays, respectively. The k·p perturbation theory was adopted to explore this situation, simulating the transitions from conduction subbands to valence subbands and their corresponding optical momentum matrix elements at/around Γ point under the in-plane asymmetric strain. The good agreements of observed and simulated results demonstrate that the in-plane strain asymmetry is the essential cause of the optical polarization in this case, revealing the great potential to utilize strain effect to control the polarization of InGaN/GaN nanostructures.