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Device level optimization of poly(vinylidene fluoride-trifluoroethylene)-zinc oxide polymer nanocomposite thin films for ferroelectric applications

机译:铁电应用聚偏二氟乙烯-三氟乙烯-氧化锌聚合物纳米复合薄膜的器件级优化

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摘要

Polymer nanocomposite was prepared using poly(vinylidene fluoride-trifluoroethylene) and zinc oxide (ZnO) nanopowder, which are ferroelectric in nature. Nanocomposite was prepared in various concentrations(0.2, 0.4, 0.8, and 1 wt. %) using probe ultra-sonication, followed by spin coating and annealing at 120℃ for 2 h to improve the formation of β -phase. Metal-ferroelectric-metal capacitor was fabricated using this optimized thin film as a ferroelectric layer. Device level optimization was carried out by polarization-electric field (P-E) hysteresis studies of this film, which shows polarization enhancement of composite. Various characterization techniques like atomic force microscopy, Fourier transform infra-red spectroscopy (FT-IR), Differential scanning calorimetry, and X-ray diffraction were used to study the β-phase formation of nancomposite. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics were studied through varying frequency and temperature. C-V measurements show an increase of 79% in the capacitance of polymer nanocomposite, which can be used for the fabrication of ferroelectric devices.
机译:使用聚(偏二氟乙烯-三氟乙烯)和氧化锌(ZnO)纳米粉制备的聚合物纳米复合材料,它们本质上是铁电的。使用探针超声处理制备了各种浓度(0.2、0.4、0.8和1 wt。%)的纳米复合材料,然后旋涂并在120℃退火2 h以改善β相的形成。使用该最优化的薄膜作为铁电层来制造金属铁电金属电容器。通过该膜的极化电场(P-E)磁滞研究对器件水平进行了优化,显示了复合材料的极化增强。原子力显微镜,傅立叶变换红外光谱(FT-IR),差示扫描量热法和X射线衍射等各种表征技术用于研究纳米复合材料的β相形成。通过改变频率和温度来研究电容-电压(C-V)和电流-电压(I-V)特性。 C-V测量表明,聚合物纳米复合材料的电容增加了79%,可用于制造铁电器件。

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  • 来源
    《Journal of Applied Physics》 |2015年第20期|204102.1-204102.8|共8页
  • 作者单位

    Nanomaterials and Device Research Laboratory, School of Nano Science and Technology, National Institute of Technology Calicut, Calicut, Kerala 673601, India;

    Nanomaterials and Device Research Laboratory, School of Nano Science and Technology, National Institute of Technology Calicut, Calicut, Kerala 673601, India;

    Nanomaterials and Device Research Laboratory, School of Nano Science and Technology, National Institute of Technology Calicut, Calicut, Kerala 673601, India,Department of ECE, B.K. Birla Institute of Engineering and Technology, Pilani, Rajasthan 333031, India;

    Nanomaterials and Device Research Laboratory, School of Nano Science and Technology, National Institute of Technology Calicut, Calicut, Kerala 673601, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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