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An ultra-thin broadband active frequency selective surface absorber for ultrahigh-frequency applications

机译:适用于超高频应用的超薄宽带有源频率选择性表面吸收器

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摘要

At frequencies below 2 GHz, conventional microwave absorbers are limited in application by their thickness or narrow absorption bandwidth. In this paper, we propose and fabricate an ultra-thin broadband active frequency selective surface (AFSS) absorber with a stretching transformation (ST) pattern for use in the ultrahigh-frequency (UHF) band. This absorber is loaded with resistors and var-actors to produce its tunability. To expand the tunable bandwidth, we applied the ST with various coefficients x and y to the unit cell pattern. With ST coefficients of x = y= 1, the tunability and strong absorption are concisely demonstrated, based on a discussion of impedance matching. On analyzing the patterns with various ST coefficients, we found that a small x/y effectively expands the tunable bandwidth. After this analysis, we fabricated an AFSS absorber with ST coefficients of x = 0.7 and y= 1. Its measured reflectivity covered a broad band of 0.7-1.9 GHz below - 10dB at bias voltages of 10-48 V. The total thickness of this absorber, 7.8 mm, was only ~λ/54 of the lower limit frequency, ~λ/29 of the center frequency, and ~λ/20 of the higher limit frequency. Our measurements and simulated results indicate that this AFSS absorber can be thin and achieve a broad bandwidth simultaneously.
机译:在2 GHz以下的频率下,常规微波吸收器的厚度或狭窄的吸收带宽限制了其应用。在本文中,我们提出并制造了一种具有拉伸变换(ST)模式的超薄宽带有源频率选择性表面(AFSS)吸收器,用于超高频(UHF)频段。该吸收器装有电阻器和变容二极管,以产生其可调性。为了扩展可调带宽,我们将具有各种系数x和y的ST应用于单位单元模式。在讨论阻抗匹配的基础上,利用x = y = 1的ST系数,简明地展示了可调性和强吸收性。通过分析具有各种ST系数的模式,我们发现较小的x / y有效扩展了可调带宽。经过此分析,我们制造了ST系数为x = 0.7和y = 1的AFSS吸收器。它的测量反射率在10-48 V偏置电压下低于-10dB的0.7-1.9 GHz宽带。 7.8 mm的吸收体仅是下限频率的约λ/ 54,中心频率的约λ/ 29和上限频率的约λ/ 20。我们的测量和模拟结果表明,这种AFSS吸收器可以很薄,并且可以同时实现宽带宽。

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  • 来源
    《Journal of Applied Physics》 |2015年第18期|184903.1-184903.8|共8页
  • 作者单位

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China and Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China and Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China and Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China and Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China and Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China and Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China and Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China and Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China;

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