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机译:InAs量子点中库珀对辐射重组的时间分辨测量
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan;
NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198, Japan;
Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan;
National Institute of Information and Communication Technology, Koganei 184-8795, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan;
National Institute of Information and Communication Technology, Koganei 184-8795, Japan;
Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan;
机译:基于InAs的量子点激光器中的辐射复合:对载流子密度和点参数的依赖性
机译:在硅上生长的InAs量子点中位错的非辐射复合
机译:Ⅱ型InAs / GaAs_(1-x)Sb_x量子点在100 ns以上的本征辐射复合寿命
机译:使用时间分辨的RHEED测量研究在覆盖InGaAs层期间InAs量子点变形
机译:量子阱半导体结构中的重组动力学(砷化镓,光致发光,辐射,时间分辨的铝)。
机译:从掠入射X射线衍射测量中提取的InAs量子点的密度依赖性成分
机译:InAs量子点中库珀对辐射重组的时间分辨测量