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首页> 外文期刊>Journal of Applied Physics >Influence of local magnetization on acceptor-bound complex state in Hg_(1-x)Mn_xTe single crystals
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Influence of local magnetization on acceptor-bound complex state in Hg_(1-x)Mn_xTe single crystals

机译:Hg_(1-x)Mn_xTe单晶中局部磁化强度对受主结合态的影响

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摘要

We performed temperature-dependent magnetic measurements and infrared photoluminescence (PL) measurements in various geometries on a series of p-type Hg_(1-x)Mn_xTe single crystals (0.20 ≤ x ≤ 0.26). Evolution of PL features was observed, and zero-field spin splitting was identified for the acceptor-bound magnetic polaron (A~0BMP). The results show direct evidence for local spontaneous magnetization of the A~0BMP. Comparison with the Ditel-Spalek model indicates that besides the fluctuation and collective regimes, the A~0BMP exhibits a new regime at low temperatures owing to the formation of the spin-glass state in Hg_(1-x)Mn_xTe. The dissociation energy of the exciton bound to the A~0BMP ((A~0,X)BMP) varied rapidly with temperature, and the ratio of the dissociation energy of the (A~0,X)BMP to the binding energy of the A~0BMP was larger than the classical value of the A~0X and no longer a constant, which breaks the Haynes rule. The free exciton localization process helps enhance the local magnetization of the (A~0,X)BMP by transferring energy from the carrier system to the Mn-spin system, and it may lead to a photoinduced configuration of non-interacting ferromagnetic domains or the photoinduced magnetization effect.
机译:我们对一系列p型Hg_(1-x)Mn_xTe单晶(0.20≤x≤0.26)进行了几何形状随温度变化的磁测量和红外光致发光(PL)测量。观察到PL特征的演变,并确定了受体结合的磁极化子(A〜0BMP)的零场自旋分裂。结果显示了A〜0BMP局部自发磁化的直接证据。与Ditel-Spalek模型的比较表明,除了Hg_(1-x)Mn_xTe中自旋玻璃态的形成,A〜0BMP在低温下表现出新的状态,除了起伏和集体状态。结合到A〜0BMP的激子的解离能((A〜0,X)BMP)随温度快速变化,(A〜0,X)BMP的解离能与A〜0BMP的结合能之比A〜0BMP大于A〜0X的经典值,并且不再是常数,这打破了Haynes规则。自由激子本地化过程通过将能量从载流子系统转移到Mn自旋系统来帮助增强(A〜0,X)BMP的局部磁化强度,这可能导致非相互作用铁磁畴的光诱导构型或光致磁化效应。

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  • 来源
    《Journal of Applied Physics》 |2015年第4期|045707.1-045707.7|共7页
  • 作者单位

    Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 200062 Shanghai, China,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 200062 Shanghai, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 200062 Shanghai, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 200062 Shanghai, China,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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