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首页> 外文期刊>Journal of Applied Physics >Moessbauer study on epitaxial CO_xFe_(4-x)N films grown by molecular beam epitaxy
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Moessbauer study on epitaxial CO_xFe_(4-x)N films grown by molecular beam epitaxy

机译:Moessbauer分子束外延生长外延CO_xFe_(4-x)N薄膜的研究

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摘要

We prepared Co_xFe_(4-x)N (x = 0, 1, 3) films on SrTiO_3(STO)(001) substrates by molecular beam epitaxy. The epitaxial relationship with Co_xFe_(4-x)N[100](001) || STO[100](001) was confirmed by ω-29 (out-of-plane) and φ-2θ_x (in-plane) x-ray diffraction (XRD) measurements. The degree of order of atoms (S) in the Co_xFe_(4-x)N films was estimated to be ~0.5 by the peak intensity ratio of Co_xFe_(4-x)N(100) (superlattice diffraction line) to (400) (fundamental diffraction line) in the φ-2θ_x XRD patterns. Conversion electron Moessbauer spectroscopy studies for the Co_xFe_(4-x)N films revealed that some N atoms are located at interstitial sites between the two nearest corner sites in the Co_xFe_(4-x)N films, and/or Fe atoms are located at both the corner and face-centered sites in the CoFe_3N and Co_3FeN films. In order to realize high spin-polarized Co_xFe_(4-x)N films having large S, further optimization of growth condition is required to prevent the site-disorders.
机译:我们通过分子束外延在SrTiO_3(STO)(001)衬底上制备了Co_xFe_(4-x)N(x = 0,1,3)薄膜。与Co_xFe_(4-x)N [100](001)||的外延关系STO [100](001)通过ω-29(面外)和φ-2θ_x(面内)x射线衍射(XRD)测量得到确认。通过Co_xFe_(4-x)N(100)(超晶格衍射线)与(400)的峰强度比,估计Co_xFe_(4-x)N膜中的原子序数(S)为〜0.5。 φ-2θ_xXRD图案中的(基本衍射线)。 Co_xFe_(4-x)N薄膜的转换电子Moessbauer光谱研究表明,一些N原子位于Co_xFe_(4-x)N薄膜中两个最近的角点之间的间隙位置,和/或Fe原子位于CoFe_3N和Co_3FeN膜的角点和脸部居中位置。为了实现具有大的S的高自旋极化Co_xFe_(4-x)N膜,需要进一步优化生长条件以防止位错。

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  • 来源
    《Journal of Applied Physics》 |2015年第2期|17B717.1-17B717.4|共4页
  • 作者单位

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan,Japan Society for the Promotion of Science (JSPS), 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan,Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05 Aobayama, Sendai 980-8579, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;

    Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6-6-05 Aobayama, Sendai 980-8579, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;

    Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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