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Temperature dependence of exciton-surface plasmon polariton coupling in Ag, Au, and Al films on In_xGa_(1-x)N/GaN quantum wells studied with time-resolved cathodoluminescence

机译:时间分辨阴极发光研究In_xGa_(1-x)N / GaN量子阱上Ag,Au和Al膜中激子-表面等离子体激元耦合的温度依赖性

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摘要

The optical properties and coupling of excitons to surface plasmon polaritons (SPPs) in Ag, Au, and Al-coated In_xGa_(1-x)N/GaN multiple and single quantum wells (SQWs) were probed with time-resolved cathodoluminescence. Excitons were generated in the metal coated SQWs by injecting a pulsed high-energy electron beam through the thin metal films. The Purcell enhancement factor (F_p) was obtained by direct measurement of changes in the temperature-dependent radiative lifetime caused by the SQW exciton-SPP coupling. Three chosen plasmonic metals of Al, Ag, and Au facilitate an interesting comparison of the exciton-SPP coupling for energy ranges in which the SP energy is greater than, approximately equal to, and less than the excitonic transition energy for the InGaN/GaN QW emitter. A modeling of the temperature dependence of the Purcell enhancement factor, F_p, included the effects of ohmic losses of the metals and changes in the dielectric properties due to the temperature dependence of (ⅰ) the intraband behavior in the Drude model and (ⅱ) the interband critical point transition energies which involve the d-bands of Au and Ag. We show that an inclusion of both intraband and interband effects is essential when calculating the ω vs k SPP dispersion relation, plasmon density of states (DOS), and the dependence of F_p on frequency and temperature. Moreover, the "back bending" in the SPP dispersion relation when including ohmic losses can cause a finite DOS above ω_(sp) and lead to a measurable F_p in a limited energy range above ω_(sp), which can potentially be exploited in plasmonic devices utilizing Ag and Au.
机译:用时间分辨阴极发光法研究了Ag,Au和Al包覆的In_xGa_(1-x)N / GaN多量子阱和单量子阱(SQW)中的激子的光学性质和激子与表面等离激元极化子(SPPs)的耦合。通过在金属薄膜中注入脉冲高能电子束,在金属包覆的SQW中产生了激子。通过直接测量由SQW激子-SPP耦合引起的依赖温度的辐射寿命的变化来获得赛尔增强因子(F_p)。三种选择的Al,Ag和Au的等离子体金属可方便地比较激子-SPP耦合的能量范围,其中SP能量大于,近似等于和小于InGaN / GaN QW的激子跃迁能量发射器。 Purcell增强因子F_p对温度的依赖性的模型包括金属的欧姆损耗和介电特性变化的影响,这归因于(of)Drude模型中的带内行为和(ⅱ)的温度依赖性。带间临界点跃迁能量,涉及Au和Ag的d带。我们表明,在计算ωvs k SPP色散关系,状态的等离激元密度(DOS)以及F_p对频率和温度的依赖性时,同时包含带内和带间效应至关重要。而且,当包含欧姆损耗时,SPP色散关系中的“后弯曲”会导致DOS高于ω_(sp)并导致可测量的F_p在ω_(sp)之上的有限能量范围内,这可潜在地用于等离子利用银和金的器件。

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  • 来源
    《Journal of Applied Physics》 |2015年第4期|043105.1-043105.14|共14页
  • 作者单位

    Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O.B 653, Beer-Sheva 84105, Israel;

    Department of Physics and The Ilse Katz Institute for Nanoscale Science and Technology, Ben-Gurion University of the Negev, P.O.B 653, Beer-Sheva 84105, Israel;

    Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93111, USA;

    Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara, California 93111, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:09:00

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