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机译:通过在(001)生长的GaAs / AlGaAs量子阱中的界面处插入超薄InAs层来调整面内光学各向异性
Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China,Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China,Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002, People's Republic of China;
Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China;
Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China;
Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China;
机译:通过在绝缘GaAs / AlGaAs量子阱的界面处插入超薄InAs层来调整Rashba / Dresselhaus自旋分裂
机译:面内单轴应变和界面不对称引起的(001)GaAs / AIGaAs量子阱中面内光学各向异性的阱宽依赖性
机译:用反射率差光谱法研究(001)GaAs / AlGaAs超晶格中的应变诱导面内光学各向异性
机译:GaAsSb / GaAs(001)层上自组装InAs量子点的分子束外延面内排序
机译:InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
机译:通过在绝缘GaAs / AlGaAs量子阱的界面处插入超薄InAs层来调整Rashba / Dresselhaus自旋分裂
机译:通过在绝缘GaAs / AlGaAs量子阱的界面处插入超薄InAs层来调整Rashba / Dresselhaus自旋分裂