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机译:GeSn薄膜中Sn原子在热退火过程中的行为:异位和原位观察
Department of Materials Science and Engineering, Kyushu Institute of Technology, Kitakyushu,Fukuoka 804-8550, Japan;
Department of Materials Science and Engineering, Kyushu Institute of Technology, Kitakyushu,Fukuoka 804-8550, Japan;
Nanoelectronics Research Institute, Advance Industrial Science and Technology, Central 5,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Nanoelectronics Research Institute, Advance Industrial Science and Technology, Central 5,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577, Japan;
IMEC, 3001 Leuven, Belgium,Department of Physics and Astronomy, KU Leuven, 3001 Leuven, Belgium;
Department of Physics and Astronomy, KU Leuven, 3001 Leuven, Belgium;
机译:氮氧化钽薄膜的原位XRD与异位真空退火:结构演变的评估
机译:直接观察非晶态GeSn热退火过程中的结晶过程:抑制Sn偏析的温度窗口
机译:热退火过程中无定形GESN结晶过程的直接观察:抑制Sn偏析的温度窗口
机译:GeSn外延膜退火过程中富锡点和线的实时观察
机译:非晶态镍铌合金的热退火行为(金属,薄膜反应,结构松弛,稳定性,覆盖层)。
机译:通过硅衬底上溅射的Ge / Sn / Ge层的快速热退火合成Ge1-xSnx合金薄膜
机译:热退火对分子束外延生长GeSn薄膜结构性能的影响