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机译:(100)InAs与原子层沉积的Al_2O_3的界面处的能带偏移和与陷阱有关的电子跃迁
Laboratory of Semiconductor Physics, Department of Physics, University of Leuven, Leuven, Belgium;
Tyndall National Institute and Department of Chemistry, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland;
Tyndall National Institute and Department of Chemistry, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland;
Tyndall National Institute and Department of Chemistry, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland;
Tyndall National Institute and Department of Chemistry, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland;
School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA;
School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA;
Laboratory of Semiconductor Physics, Department of Physics, University of Leuven, Leuven, Belgium;
Laboratory of Semiconductor Physics, Department of Physics, University of Leuven, Leuven, Belgium;
Laboratory of Semiconductor Physics, Department of Physics, University of Leuven, Leuven, Belgium;
机译:(100)InSb与原子层沉积的Al_2O_3的界面上的电子带取向
机译:(100)lnP与原子层沉积Al_2O_3之间的电子能带对准
机译:(100)InSb与原子层沉积的Al2O3界面的电子能带对准
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机译:X射线光电子能谱研究原子层沉积Al2O3 / Zn0.8Al0.2O异质结中的能带偏移测量
机译:(100)InAs与原子层沉积的Al2O3的界面处的带偏移和与陷阱相关的电子跃迁