首页> 外文期刊>Journal of Applied Physics >Understanding electrical-thermal transport characteristics of organic semiconductors: Violation of Wiedemann-Franz law
【24h】

Understanding electrical-thermal transport characteristics of organic semiconductors: Violation of Wiedemann-Franz law

机译:了解有机半导体的电热传输特性:违反Wiedemann-Franz法则

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Organic semiconductors exhibit plenty of attractive properties for use as thermoelectric elements. A comprehensive understanding for the electrical-thermal transport characteristics is crucial to design and fabricate the thermoelectric device. We proposed a theoretical model to investigate the electrical conductivity and the electronic thermal conductivity of organic semiconductors based on the hopping transport mechanism. The electrical-thermal transport characteristics of organic semiconductors have been analyzed in detail and compared with the experimental results and Monte Carlo simulation. The Wiedemann-Franz law, connecting the electronic thermal conductivity to the electrical conductivity of organic semiconductors, is generally found to be strongly violated under the effect of temperature, carrier concentration, energetic disorder and electric field.
机译:有机半导体具有许多吸引人的特性,可用作热电元件。对电热传输特性的全面理解对于设计和制造热电设备至关重要。我们提出了一种基于跳跃传输机制研究有机半导体的电导率和电子热导率的理论模型。详细分析了有机半导体的电热传输特性,并将其与实验结果和蒙特卡洛模拟进行了比较。通常,在温度,载流子浓度,高能无序和电场的作用下,强烈违反了将电子热导率与有机半导体的电导率联系起来的维德曼-弗朗兹定律。

著录项

  • 来源
    《Journal of Applied Physics》 |2016年第19期|195108.1-195108.6|共6页
  • 作者单位

    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China,Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;

    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China,Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;

    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China,Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;

    Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China,Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 210009, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号