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首页> 外文期刊>Journal of Applied Physics >Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures
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Effect of IrMn inserted layer on anomalous-Hall resistance and spin-Hall magnetoresistance in Pt/IrMn/YIG heterostructures

机译：IrMn插入层对Pt / IrMn / YIG异质结构中异常霍尔电阻和自旋霍尔磁阻的影响

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摘要

We report an investigation of anomalous-Hall resistance (AHR) and spin-Hall magnetoresistance (SMR) in Pt/Ir_(20)Mn_(80)/Y_3Fe_5O_(12) (Pt/IrMn/YIG) heterostructures. The AHR of Pt/lrMn/YIG heterostructures with an antiferromagnetic inserted layer is dramatically enhanced as compared to that of the Pt/YIG bilayer. The temperature dependent AHR behavior is nontrivial, while the IrMn thickness dependent AHR displays a peak at an IrMn thickness of 3 nm. The observed SMR in the temperature range of 10-300 K indicates that the spin current generated in the Pt layer can penetrate the IrMn layer (≤3 nm) to interact with the ferromagnetic YIG layer. The lack of conventional anisotropic magnetoresistance (AMR) implies that the insertion of the IrMn layer between Pt and YIG could efficiently suppress the magnetic proximity effect (MPE) on induced Pt moments by YIG.
机译：我们报告了对Pt / Ir_（20）Mn_（80）/ Y_3Fe_5O_（12）（Pt / IrMn / YIG）异质结构的异常霍尔电阻（AHR）和自旋霍尔磁阻（SMR）的研究。与Pt / YIG双层相比，具有反铁磁插入层的Pt / lrMn / YIG异质结构的AHR显着提高。与温度相关的AHR行为是不平凡的，而与IrMn厚度相关的AHR在3 nm的IrMn厚度处显示一个峰值。在10-300 K的温度范围内观察到的SMR表明，在Pt层中产生的自旋电流可以穿透IrMn层（≤3nm）与铁磁YIG层相互作用。缺乏常规的各向异性磁阻（AMR）意味着在Pt和YIG之间插入IrMn层可以有效地抑制YIG对Pt磁矩的磁接近效应（MPE）。

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  • 来源
    《Journal of Applied Physics》 |2016年第13期|133901.1-133901.6|共6页
  • 作者

    T. Shang; H. L. Yang; Q. F. Zhan; Z. H. Zuo; Y. L. Xie; L. P. Liu; S. L. Zhang; Y. Zhang; H. H. Li; B. M. Wang; Y. H. Wu; S. Zhang; Run-Wei Li;

  • 作者单位

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China,Swiss Light Source and Laboratory for Scientific Developments and Novel Materials, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

    Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583;

    Department of Physics, University of Arizona, Tucson, Arizona 85721, USA;

    Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China;

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