Negative Magnetoresistance and Hole-Hole Interaction in Multilayer Heterostructures p-Ge/Ge1-xSix.

摘要

The quantum corrections to the conductivity of the high-mobility multilayer p-Ge/Ge(1-x)Si(x) heterostructures are investigated at T (0.1 : 20)K in magnefic fields B up to 1.5 T. The observed negative magnetoresistance with logarithmic dependencies both on temperature and magnetic field for B > 0. 1 T is interpreted as the consequence of the particle-particle (hole-hole) attractive interaction in the Cooper channel.