...
首页> 外文期刊>Journal of Applied Physics >Ferromagnetic resonance of a YIG film in the low frequency regime
【24h】

Ferromagnetic resonance of a YIG film in the low frequency regime

机译:YIG薄膜在低频状态下的铁磁共振

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

An improved method for characterizing the magnetic anisotropy of films with cubic symmetry is described and is applied to an yttrium iron garnet (111) film. Analysis of the ferromagnetic resonance (FMR) spectra performed both in-plane and out-of-plane from 0.7 to 8 GHz yielded the magnetic anisotropy constants as well as the saturation magnetization. The field at which FMR is observed turns out to be quite sensitive to anisotropy constants (by more than a factor ten) in the low frequency (<2 GHz) regime, and when the orientation of the magnetic field is nearly normal to the sample plane; the restoring force on the magnetization arising from the magnetocrystalline anisotropy fields is then comparable to that from the external field, thereby allowing the anisotropy constants to be determined with greater accuracy. In this region, unusual dynamical behaviors are observed such as multiple resonances and a switching of FMR resonance with only a 1° change in field orientation at 0.7 GHz.
机译:描述了一种表征立方对称薄膜磁各向异性的改进方法,并将其应用于钇铁石榴石(111)薄膜。在平面内和平面外在0.7至8 GHz范围内进行铁磁共振(FMR)频谱分析,得出磁各向异性常数以及饱和磁化强度。事实证明,在低频(<2 GHz)状态下以及当磁场的方向几乎垂直于样本平面时,观察到FMR的场对各向异性常数非常敏感(超过十倍)。 ;因此,由磁晶各向异性场引起的磁化恢复力可与来自外场的恢复力相媲美,从而可以更精确地确定各向异性常数。在该区域中,观察到不寻常的动力学行为,例如多重共振和FMR共振的切换,在0.7 GHz时场方向仅发生1°的变化。

著录项

  • 来源
    《Journal of Applied Physics》 |2016年第3期|033905.1-033905.6|共6页
  • 作者单位

    Department of Physics, Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, South Korea;

    Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA;

    Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA;

    Department of Engineering and Management of Advanced Technology, Chang Jung Christian University, Tainan 71101, Taiwan;

    Department of Materials Science and Engineering, Hallym University, Chuncheon 200-702, South Korea;

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology, Chengdu, Sichuan 610054, China;

    State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology, Chengdu, Sichuan 610054, China;

    Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号